Description Goals and brief description of the conference

Defects in crystalline solids are ubiquitous. It is the second law of thermodynamics that gives rise to the appearance of a certain amount of disorder in crystalline materials at finite temperatures. Moreover, defects can be present in synthetic materials well above the equilibrium concentration due to the imperfections of material production processes or due to the exposure of the system to irradiation with energetic particles. Such lattice imperfections have a strong influence on the electronic, optical, thermal, and mechanical properties of the solids, normally deteriorating their characteristics.

However, defects not always have detrimental effects on material properties, with the most prominent example being the doping of semiconductors by controllable introduction of impurities using ion implantation. In general, treatments of solids with beams of energetic ions and electrons have been shown to be a very powerful tool for the post-synthesis tailoring of material characteristics.

The goal of the conference is to bring together active researchers in the field, as well as several experts in the related areas, to discuss "state of the art" in theory and experiment dealing with the physics of defects in solids. The effects of impurities and point/line defects on various properties of solids will be addressed, and the attendees will be able to learn not only the experimental facts, but also understand how the defects are treated within the framework of computational and analytical methods in theoretical physics. Particular attention is going to be paid to defects in nanomaterials, as the reduced dimensionality strongly affects their behavior.

The Program will include about 20 oral presentations given by invited speakers, a poster session, and a limited number of short talks selected from contributed abstracts.

Topics to be addressed

  • Modern techniques (Raman spectroscopy, STM, XPS, TEM, etc.) used to assess concentration of defect in solids and identify their types
  • First-principles modeling of native defects and impurities
  • Ion and electron irradiation-induced defects
  • Simulations of ion impacts onto solids
  • Defects in superconductors
  • Defects in low-dimensional materials (graphene, inorganic 2D materials, nanotubes etc.)
  • Topological defects
  • Defects for quantum computing

The conference will be preceded by a half-day tutorial where an introduction to the techniques used to characterize the defects will be given, along with the modern computational techniques used to get theoretical insights into defect behavior.

List of invited speakers and lecturers at the tutorial:
U. BANGERT, University of Limerick, Ireland
P. BØGGILD, DTU Nanotech, Denmark
D. EFREMOV, IFW, Dresden, Germany
D. GOLBERG, Queensland University of Technology, Australia
A. JORIO, Universidade Federal de Minas Gerais, Brazil
K. KAASBJERG, Danish Technical University, Denmark
H. KOMSA, Aalto University, Finland
J. KOTAKOSKI, University of Vienna, Austria
G. LEE, Seoul National University, South Korea
V. MEUNIER, Rensselaer Polytechnic Institute, USA
T. MICHELY, University of Köln, Germany
M. NASTASI, University of Nebraska at Lincoln, USA
J. NEUGEBAUER, Max-Planck-Institut für Eisenforschung, Germany
M. SCARDAMAGLIA, University of Mons, Belgium
M. SCHLEBERGER, Duisburg-Essen University, Germany
G. SEIFERT, TU Dresden, Germany
T. SUSI, University of Vienna, Austria
A. VANTOMME, KU Leuven, Belgium
Several additional invited speakers will be selected from the submitted abstracts.

If the applicant wants his/her abstract to be included in the Conference book of abstracts, it should also be submitted as a Word file using a template posted at


A limited number of grants are available to support the attendance of selected participants, with priority given to participants from developing countries. There is no registration fee.


31 March 2018
for those who need visa

15 April 2018


Please visit also
Go to day
  • Monday, 9 July 2018
    • 08:30 - 14:45
      • 08:30 Registration, Administrative and Financial formalities 30'
        All financially supported participants lodging at ICTP Guesthouses should reach the Operations and Travel Unit at the Enrico Fermi Building in order to fulfill all financial procedures. Please bring with you passport and travel receipts.
        Registration at Adriatico Guesthouse Lower Level: only for participants lodging outside ICTP premises and faculty.
      • 09:00 Defects in bulk and low-dimensional materials 30'
        Speaker: A. Krasheninnikov (Helmholtz-Zentrum Dresden-Rossendorf, Germany and Aalto University, Finland)
        Material: Slides
      • 09:30 Identification of surface defects using STM 30'
        Speaker: T. Michely (University of Köln, Germany)
      • 10:00 Identifying defects using transmission electron microscopy and spectroscopy 30'
        Speaker: T. Susi (University of Vienna, Austria)
      • 10:30 Atomistic modeling of point defects 30'
        Speaker: H.-P. Komsa (Aalto University, Finland)
        Material: Slides
      • 11:00 Coffee break 30'
      • 11:30 Ion-Solid Interactions and Defect Formation 30'
        Speaker: M. Nastasi (University of Nebraska at Lincoln, USA)
        Material: Slides
      • 12:00 Assessing defects in solids with ion channeling 30'
        Speaker: A. Vantomme (KU Leuven, Belgium)
      • 12:30 Recent developments in x-ray photoelectron spectroscopy 30'
        Speaker: M. Scardamaglia (University of Mons, Belgium)
      • 13:00 Lunch break 1h45'
    • 14:45 - 15:00 Opening
    • 15:00 - 17:00 Session 1
      Convener: A. Krasheninnikov (Helmholtz-Zentrum Dresden-Rossendorf, Germany and Aalto University, Finland)
      • 15:00 Luttinger liquid in a box: electrons confined within MoS2 mirror twin boundaries 40'
        Speaker: T. Michely (University of Köln, Germany)
      • 15:40 First-principles approaches for charged defects in low dimensional systems 40'
        Speaker: J. Neugebauer (Max-Planck-Institut für Eisenforschung, Germany)
      • 16:20 Coffee break 40'
    • 17:00 - 18:40 Session 2
      Convener: D. Efremov (IFW, Dresden, Germany)
      • 17:00 Dislocations in covalent materials: the puzzling complexity of cores 40'
        Speaker: L. Pizzagalli (CNRS, France)
        Material: Slides
      • 17:40 Engineering of spin defects in silicon carbide for quantum applications 40'
        Speaker: G. Astakhov (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
      • 18:20 High Oxygen Doping of h-BN for Electronic and Magnetic Properties Engineering 20'
        Speaker: D. Kvashnin (National University of Science and Technology MISiS, Russian Federation)
    • 19:30 - 21:30 Welcome Reception
      All participants of the Conference are cordially invited to the Welcome Reception.
      Location: Adriatico Guesthouse - Terrace
  • Tuesday, 10 July 2018
    • 09:00 - 11:20 Session 3
      Convener: V. Meunier (Rensselaer Polytechnic Institute, USA)
      • 09:00 Luminescence at defects in h-BN : excitons at stacking faults and single photon emitters 40'
        Speaker: A. Zobelli (Université Paris Sud, France)
      • 09:40 Formation energies and defect levels of charged defects in 2D materials 40'
        Speaker: H.-P. Komsa (Aalto University, Finland)
      • 10:20 What happens to graphene-coated copper during realistic oxidation conditions? 20'
        Speaker: M. Scardamaglia (University of Mons, Belgium)
      • 10:40 Coffee break 40'
    • 11:20 - 15:00 Session 4
      Convener: P. Bøggild (DTU Nanotech, Denmark)
      • 11:20 Electron Microscopy and Spectroscopy of Defects in Low-Dimensional Materials 40'
        Speaker: K. Suenaga (AIST, Japan)
      • 12:00 Electrons and vibrations meet defects in reduced dimensions 40'
        Speaker: V. Meunier (Rensselaer Polytechnic Institute, USA)
      • 12:40 Intrinsic and engineered point defects in two-dimensional 1T’-MoS2 20'
        Speaker: M. Pizzochero (EPFL, Switzerland)
      • 13:00 Lunch break 2h0'
    • 15:00 - 17:00 Session 5
      Convener: J. Neugebauer (Max-Planck-Institut für Eisenforschung, Germany)
      • 15:00 Defect dimensionality in the micro- and the nano-Raman scattering from two-dimensional systems 40'
        Speaker: A. Jorio (Universidade Federal de Minas Gerais, Brazil)
      • 15:40 Direct imaging of kinetic pathways of atomic diffusion in monolayer MoS2 by ADF-STEM 40'
        Speaker: C. Jin (Zhejiang University, People's Republic of China)
      • 16:20 Contributed 12 20'
        Speaker: Silvan Kretschmer (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
      • 16:40 Contributed 20'
        Speaker: M. Taherinejad (ETH Zurich, Switzerland)
    • 17:00 - 20:00 Poster session
      During the poster session will be served a get-together drink with snacks for the participants.
      Location: Adriatico Guest House - Lower Level
  • Wednesday, 11 July 2018
    • 09:00 - 11:20 Session 6
      Convener: J. Kotakoski (University of Vienna, Austria)
      • 09:00 Ion-Irradiation-Induced Defects in Solids 40'
        Speaker: M. Nastasi (University of Nebraska at Lincoln, USA)
        Material: Slides
      • 09:40 Implantation-induced defects and lattice site of impurities in semiconductors 40'
        Speaker: A. Vantomme (KU Leuven, Belgium)
      • 10:20 Effects of disorder and resonant scattering in twisted bilayer graphene 20'
        Speaker: M. Anđelković (Universiteit Antwerpen, Belgium)
      • 10:40 Coffee break 40'
    • 11:20 - 14:00 Session 7
      Convener: H.-P. Komsa (Aalto University, Finland)
      • 11:20 On 2D materials and their defects under electron irradiation 40'
        Speaker: J. Kotakoski (University of Vienna, Austria)
        Material: Slides
      • 12:00 Graphene at the edge of perfection 40'
        Speaker: P. Bøggild (DTU Nanotech, Denmark)
      • 12:40 Aharonov-Bohm interferometer on helical edge states: Coherent enhancement of scattering off magnetic impurity 20'
        Speaker: R. Niiazov (National Research Center «Kurchatov Institute», Russian Federation)
      • 13:00 Lunch break 1h0'
    • 14:00 - 22:00 Excursion and dinner
      • 14:00 Excursion and dinner 8h0'
        13.45 - Meeting point: bus station outside Adriatico Guesthouse (at the roundabout near the sea). Please arrive on time as the bus will not wait for the latecomers!
        14.00 - Departure of the bus from the meeting point towards the Škocjan Karst Caves
        18.00 - Departure of the bus from the Škocjan Karst Caves back to the Adriatico Guesthouse
        19.30 - Departure of the bus from the Adriatico Guesthouse for the dinner at Mezzaluna
        The duration of the guided tour of the Škocjan Karst Caves is cca. 2 hours. The temperature in the cave is 12º C, the path is long 3 km and the difference in the altitude is 144 meters. Therefore, please bring with you some warm clothes and wear comfortable shoes like sneakers and walking shoes, NO sandals and high heels.
        Please remember to bring with you your passport/identity card as we will be crossing the border between Italy and Slovenia.
        The dinner for the accompanying persons costs Euro 26,50 per person and has to be settled directly at the restaurant Mezzaluna at the end of the dinner.
  • Thursday, 12 July 2018
    • 09:00 - 11:20 Session 8
      Convener: G. Lee (Seoul National University, South Korea)
      • 09:00 Ion Irradiation Induced Defects in 2D Materials 40'
        Speaker: M. Schleberger (Duisburg-Essen University, Germany)
      • 09:40 In-situ TEM Methods for Analysis of Nanomaterial Defects/Properties Relationships 40'
        Speaker: D. Golberg (Queensland University of Technology, Australia)
      • 10:20 Revealing the 3D Structure of Graphene Defects 20'
        Speaker: C. Hofer (University of Vienna, Austria)
      • 10:40 Coffee break 40'
    • 11:20 - 15:00 Session 9
      Convener: M. Schleberger (Duisburg-Essen University, Germany)
      • 11:20 Cooperative Research of Simulations and Experiments for Structural Change of Carbon Linear Chains and MoS2 40'
        Speaker: G. Lee (Seoul National University, South Korea)
      • 12:00 Defects in WSe2 investigated by Quasi-Particle Interference mapping and STM/STS 20'
        Speaker: M. Edmonds (University of Bath, United Kingdom)
      • 12:20 Half-metallic ferromagnetism induced by Sn-doping in SrRuO3 perovskite oxides 20'
        Speaker: J. Yu (Seoul National University, South Korea)
      • 12:40 DFT study on Intrinsic Defects in hBN 20'
        Speaker: J. Strand (University College London, United Kingdom)
      • 13:00 Lunch break 2h0'
    • 15:00 - 17:00 Session 10
      Convener: D. Golberg (Queensland University of Technology, Australia)
      • 15:00 Electron-Microscopy and -Spectroscopy of Defects in 2-D Materials 40'
        Speaker: U. Bangert (University of Limerick, Ireland)
      • 15:40 Ion and electron beam modification of graphene 20'
        Speaker: M. Tripathi (University of Vienna, Austria)
      • 16:00 Spectral properties of radiation-induced near-cluster color centers in LiF, NaF and MgF2 nanocrystals 20'
        Speaker: A. Novikau (Institute of Physics NAS, Belarus)
        Material: Slides
      • 16:20 Coffee break 40'
    • 17:00 - 18:40 Session 11
      Convener: K. Kaasbjerg (Danish Technical University, Denmark)
      • 17:00 Disorder in multi-band superconductors 40'
        Speaker: D. Efremov (IFW, Dresden, Germany)
      • 17:40 Vacancy defects with trapped adatoms in epitaxial graphene on Ni(111) 20'
        Speaker: V. Carnevali (Universita' degli Studi di Trieste, Italy)
      • 18:00 To have (Kondo Effect) and have not: Renormalization and scaling 20'
        Speaker: E. Kogan (Bar-Ilan University, Israel)
      • 18:20 First-principles study of defect complexes in Ti-doped sapphire 20'
        Speaker: D. Fil (Institute for Single Crystals NASU, Ukraine)
  • Friday, 13 July 2018
    • 09:00 - 11:00 Session 12
      Convener: U. Bangert (University of Limerick, Ireland)
      • 09:00 A unified theory for quasiparticle interference from defects in two-dimensional materials 40'
        Speaker: K. Kaasbjerg (Danish Technical University, Denmark)
      • 09:40 Transport in systems with nodal degeneracy 20'
        Speaker: A. Sinner (University Augsburg, Germany)
      • 10:00 CoFFEE: Corrections for Formation Energy and Eigenvalues for charged defect simulations 20'
        Speaker: M. Naik (Indian Institute of Science, India)
      • 10:20 Defects in MoS2 monolayers – repair, doping and functionalization 40'
        Speaker: G. Seifert (TU Dresden, Germany)
        Material: Slides
    • 11:00 - 11:10 Closing
    • 11:30 - 13:00 ICTP Colloquium on "Manipulating many quanta one by one: molecules of light and 51 atomic qubits"