Goals and brief description of the conference
Defects in crystalline solids are ubiquitous. It is the second law of thermodynamics that gives rise to the appearance of a certain amount of disorder in crystalline materials at finite temperatures. Moreover, defects can be present in synthetic materials well above the equilibrium concentration due to the imperfections of material production processes or due to the exposure of the system to irradiation with energetic particles. Such lattice imperfections have a strong influence on the electronic, optical, thermal, and mechanical properties of the solids, normally deteriorating their characteristics.
However, defects not always have detrimental effects on material properties, with the most prominent example being the doping of semiconductors by controllable introduction of impurities using ion implantation. In general, treatments of solids with beams of energetic ions and electrons have been shown to be a very powerful tool for the post-synthesis tailoring of material characteristics.
The goal of the conference is to bring together active researchers in the field, as well as several experts in the related areas, to discuss "state of the art" in theory and experiment dealing with the physics of defects in solids. The effects of impurities and point/line defects on various properties of solids will be addressed, and the attendees will be able to learn not only the experimental facts, but also understand how the defects are treated within the framework of computational and analytical methods in theoretical physics. Particular attention is going to be paid to defects in nanomaterials, as the reduced dimensionality strongly affects their behavior.
The Program will include about 20 oral presentations given by invited speakers, a poster session, and a limited number of short talks selected from contributed abstracts.
Topics to be addressed
The conference will be preceded by a half-day tutorial where an introduction to the techniques used to characterize the defects will be given, along with the modern computational techniques used to get theoretical insights into defect behavior.
List of invited speakers and lecturers at the tutorial:
U. BANGERT, University of Limerick, Ireland
P. BØGGILD, DTU Nanotech, Denmark
D. EFREMOV, IFW, Dresden, Germany
D. GOLBERG, Queensland University of Technology, Australia
A. JORIO, Universidade Federal de Minas Gerais, Brazil
K. KAASBJERG, Danish Technical University, Denmark
H. KOMSA, Aalto University, Finland
J. KOTAKOSKI, University of Vienna, Austria
G. LEE, Seoul National University, South Korea
V. MEUNIER, Rensselaer Polytechnic Institute, USA
T. MICHELY, University of Köln, Germany
M. NASTASI, University of Nebraska at Lincoln, USA
J. NEUGEBAUER, Max-Planck-Institut für Eisenforschung, Germany
L. PIZZAGALLI, CNRS, France
M. SCARDAMAGLIA, University of Mons, Belgium
M. SCHLEBERGER, Duisburg-Essen University, Germany
G. SEIFERT, TU Dresden, Germany
K. SUENAGA, AIST, Japan
T. SUSI, University of Vienna, Austria
A. VANTOMME, KU Leuven, Belgium
Several additional invited speakers will be selected from the submitted abstracts.
If the applicant wants his/her abstract to be included in the Conference book of abstracts, it should also be submitted as a Word file using a template posted at
A limited number of grants are available to support the attendance of selected participants, with priority given to participants from developing countries. There is no registration fee.
31 March 2018
for those who need visa
15 April 2018
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