Modeling of damage in ion irradiated semiconductors

The IBIC technique, expounded in previous lectures, is non destructive if very low fluences of light ions are used. However, if this condition is not fulfilled, a localized damage is induced in the semiconductor, which degrades the performances of the device. Accordingly, ions can be used both to generate recombination or trapping centres and to probe their effects on the transport properties of the material. This lecture intends to illustrate an effective experimental protocol for the evaluation of the radiation induced degradation of the electronic performances of devices based on the IBIC technique and the relevant physical model, which is suitable to extract information on the effective radiation hardness of semiconductor materials.