Electrically active defects in semiconductors induced by radiation

In this talk, an overview of the current research on electrically active defects in semiconductors introduced by ion implantation, electron, neutron and Gamma-radiation will be presented. The fundamental differences between damage introduced by those sources, from point-like to cluster-related defects, will be shown. The application of capacitance transient techniques such as Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS for studying the electrically active defects will be explained. The invention of DLTS, and later an improvement with Laplace DLTS which gives an order of magnitude better energy resolution has meant an enormous breakthrough in the study of electrically active radiation defects in semiconductors.