Radiation damage in bipolar junction transistors
Place
Location: Trieste - Italy
Date:
16 Aug 14:00 - 15:30
Description
In this lecture the application of the previous lectures will be presented for a special case, radiation damage in bipolar junction transistors (BJTs). It will be shown how to use the previously presented methods (modeling ion solid interactions, various materials science methods, etc.) in a real life research project.
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Presented by GYöRGY VIZKELETHY
on
16/8/2012
at
14:00
Organizers
IAEA: Aliz Simon and Andrej Zeman; Local Organiser: Sandro Scandolo