Radiation induced defects in semiconductors: Optical study
Place
Location: Trieste - Italy
Date:
17 Aug 09:00 - 10:30
Description
Besides electronically active defects, radiation introduces defects which give rise to a level falling in the valence or conduction ban, and therefore are not active. However, such radiation induced defects affect the optical properties of the semiconductor. Absorption spectroscopy may provide useful chemical and structural information, particularly when applied at cryogenic temperatures. One important advantage of photoluminescence (PL) spectroscopy is its high spectral resolution, which renders the technique sensitive to isotope or mechanical stress effects. In this talk, an overview of radiation introduced (gamma rays, electrons, protons, ions) studied by IR and PL will be given.
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Presented by IVANA CAPAN
on
17/8/2012
at
9:00
Organizers
IAEA: Aliz Simon and Andrej Zeman; Local Organiser: Sandro Scandolo