Description |
A milestone in graphene research was the 2005 discovery of an integer quantum Hall effect in this novel carbon-based two-dimensional (2D) electron system. Contrary to its manifestation in conventional 2D electron systems, such as in semiconductor heterostructures, the graphene quantum Hall effect reflects the "ultra-relativistic" character of the underlying carriers, via a particular sequence of plateaus in the transverse Hall resistance. A natural question arises from this discovery: what about the fractional quantum Hall effect in graphene? Does it also reflect the ultra-relativistic character of the charge carriers? To what extent is it different from the fractional quantum Hall effect in (non-relativistic) semiconductor heterostructures? Many of these questions remain open from an experimental point of view, although some fractional states have recently been observed in the two- and four-terminal configuration. This talk aims at a theoretical perspective on the fractional quantum Hall effect in graphene, namely in view of its multi-component character due to the fourfold spin-valley degeneracy, which is approximately respected by the underlying electron-electron interactions. This theoretical perspective will be confronted with recent experimental advances. |
Seminar on Disorder and strong electron correlations: "Multi-component fractional quantum Hall effect in graphene"
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