ICTP Seminar Series in Condensed Matter and Statistical Physics "Trapping Centers at the Superfluid-Mott-Insulator Criticality: Transition between Charge-quantized States"
Starts 19 Oct 2017 11:30
Ends 19 Oct 2017 12:30
Central European Time
Leonardo Building - Luigi Stasi Seminar Room
Under the conditions of superfluid-Mott-insulator criticality in two dimensions, the trapping centers - i.e., local potential wells and bumps - are generically characterized by an integer charge corresponding to the number of trapped particles (if positive) or holes (if negative). Varying the strength of the center leads to a transition between two competing ground states with charges differing by (plus or minus) one. The hallmark of the transition scenario is a splitting of the number density distortion into a half-integer core and a large halo carrying the complementary charge plus/minus 1/2. The sign of the halo charge changes across the transition. The radius of the halo diverges on the approach to the critical strength of the center.
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