Starts 21 Mar 2012 16:00
Ends 21 Mar 2012 20:00
Central European Time
ICTP
Leonardo da Vinci Building Luigi Stasi Seminar Room
Strada Costiera, 11 I - 34151 Trieste (Italy)
We discuss the full counting statistics of charge transport through a nano device and introduce a general way to calculate it numerically at zero-temperature. We apply this to a strongly correlated model: the interacting resonant level model; where it turns out we can also calculate the full counting statistics exactly, to good agreement with the numerics. From the analytic properties of the full solution, we show that the system undergoes charge fractionalization when the bias voltage exceeds a certain threshold.
  • M. Poropat