Contribution
Speakers
- Pedro L. GRANDE
Description
MEIS is an ion beam characterization technique capable to determine with subnanometric depth resolution elemental composition and concentration-depth profiles in thin films. This technique is widely used for analysis of microelectronic materials as well as for the determination of structural and vibrational parameters of crystalline surfaces. In this talk the principles of MEIS will be given and a comparison with other high resolution techniques will be shown. Applications for depth profilling of thin and ultra thin films using ions and cluster ions will be provided and typical pitfalls will be discussed.