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Displaying 41 speakers out of 41
A. JORIO (Universidade Federal de Minas Gerais, Brazil)
Defect dimensionality in the micro- and the nano-Raman scattering from two-dimensional systems
A. KRASHENINNIKOV (Helmholtz-Zentrum Dresden-Rossendorf, Germany and Aalto University, Finland)
Defects in bulk and low-dimensional materials
A. NOVIKAU (Institute of Physics NAS, Belarus)
Spectral properties of radiation-induced near-cluster color centers in LiF, NaF and MgF2 nanocrystals
A. SINNER (University Augsburg, Germany)
Transport in systems with nodal degeneracy
A. VANTOMME (KU Leuven, Belgium)
Assessing defects in solids with ion channeling
Implantation-induced defects and lattice site of impurities in semiconductors
A. ZOBELLI (Université Paris Sud, France)
Luminescence at defects in h-BN : excitons at stacking faults and single photon emitters
C. HOFER (University of Vienna, Austria)
Revealing the 3D Structure of Graphene Defects
C. JIN (Zhejiang University, People's Republic of China)
Direct imaging of kinetic pathways of atomic diffusion in monolayer MoS2 by ADF-STEM
D. EFREMOV (IFW, Dresden, Germany)
Disorder in multi-band superconductors
D. FIL (Institute for Single Crystals NASU, Ukraine)
First-principles study of defect complexes in Ti-doped sapphire
D. GOLBERG (Queensland University of Technology, Australia)
In-situ TEM Methods for Analysis of Nanomaterial Defects/Properties Relationships
D. KVASHNIN (National University of Science and Technology MISiS, Russian Federation)
High Oxygen Doping of h-BN for Electronic and Magnetic Properties Engineering
E. KOGAN (Bar-Ilan University, Israel)
To have (Kondo Effect) and have not: Renormalization and scaling
G. ASTAKHOV (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
Engineering of spin defects in silicon carbide for quantum applications
G. LEE (Seoul National University, South Korea)
Cooperative Research of Simulations and Experiments for Structural Change of Carbon Linear Chains and MoS2
G. SEIFERT (TU Dresden, Germany)
Defects in MoS2 monolayers – repair, doping and functionalization
H.-P. KOMSA (Aalto University, Finland)
Atomistic modeling of point defects
Formation energies and defect levels of charged defects in 2D materials
J. KOTAKOSKI (University of Vienna, Austria)
On 2D materials and their defects under electron irradiation
J. NEUGEBAUER (Max-Planck-Institut für Eisenforschung, Germany)
First-principles approaches for charged defects in low dimensional systems
J. STRAND (University College London, United Kingdom)
DFT study on Intrinsic Defects in hBN
J. YU (Seoul National University, South Korea)
Half-metallic ferromagnetism induced by Sn-doping in SrRuO3 perovskite oxides
K. KAASBJERG (Danish Technical University, Denmark)
A unified theory for quasiparticle interference from defects in two-dimensional materials
K. SUENAGA (AIST, Japan)
Electron Microscopy and Spectroscopy of Defects in Low-Dimensional Materials
L. PIZZAGALLI (CNRS, France)
Dislocations in covalent materials: the puzzling complexity of cores
M. ANĐELKOVIĆ (Universiteit Antwerpen, Belgium)
Effects of disorder and resonant scattering in twisted bilayer graphene
M. EDMONDS (University of Bath, United Kingdom)
Defects in WSe2 investigated by Quasi-Particle Interference mapping and STM/STS
M. NAIK (Indian Institute of Science, India)
CoFFEE: Corrections for Formation Energy and Eigenvalues for charged defect simulations
M. NASTASI (University of Nebraska at Lincoln, USA)
Ion-Solid Interactions and Defect Formation
Ion-Irradiation-Induced Defects in Solids
M. PIZZOCHERO (EPFL, Switzerland)
Intrinsic and engineered point defects in two-dimensional 1T’-MoS2
M. SCARDAMAGLIA (University of Mons, Belgium)
Recent developments in x-ray photoelectron spectroscopy
What happens to graphene-coated copper during realistic oxidation conditions?
M. SCHLEBERGER (Duisburg-Essen University, Germany)
Ion Irradiation Induced Defects in 2D Materials
M. TAHERINEJAD (ETH Zurich, Switzerland)
Contributed
M. TRIPATHI (University of Vienna, Austria)
Ion and electron beam modification of graphene
P. BØGGILD (DTU Nanotech, Denmark)
Graphene at the edge of perfection
R. NIIAZOV (National Research Center «Kurchatov Institute», Russian Federation)
Aharonov-Bohm interferometer on helical edge states: Coherent enhancement of scattering off magnetic impurity
SILVAN KRETSCHMER (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
Contributed 12
T. MICHELY (University of Köln, Germany)
Identification of surface defects using STM
Luttinger liquid in a box: electrons confined within MoS2 mirror twin boundaries
T. SUSI (University of Vienna, Austria)
Identifying defects using transmission electron microscopy and spectroscopy
U. BANGERT (University of Limerick, Ireland)
Electron-Microscopy and -Spectroscopy of Defects in 2-D Materials
V. CARNEVALI (Universita' degli Studi di Trieste, Italy)
Vacancy defects with trapped adatoms in epitaxial graphene on Ni(111)
V. MEUNIER (Rensselaer Polytechnic Institute, USA)
Electrons and vibrations meet defects in reduced dimensions

Organizers

Carla Bittencourt (University of Mons, Belgium), Chris Ewels (Institut des Matériaux, Nantes, France), Stefan Facsko (Helmholtz-Zentrum Dresden- Rossendorf, Germany), Arkady Krasheninnikov (Helmholtz-Zentrum Dresden-Rossendorf, Germany and Aalto University, Finland), Local Organiser: Mikhail Kiselev

Co-sponsors